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ST1803DFH
HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR
NEW Fully Plastic TO-220 for HIGH VOLTAGE APPLICATIONS s NEW SERIES, ENHANCED PERFORMANCE www..com s INTEGRATED FREE WHEELING DIODE s HIGH VOLTAGE CAPABILITY ( > 1500 V ) s HIGH SWITCHING SPEED s TIGTHER hfe CONTROL s IMPROVED RUGGEDNESS s FULLY INSULATED PACKAGE (U.L. COMPLIANT) FOR EASY MOUNTING s CREEPAGE DISTANCE PATH > 4 mm
s
APPLICATIONS: s HORIZONTAL DEFLECTION FOR COLOR TVS DESCRIPTION The device is manufactured using Diffused Collector technology for more stable operation Vs base drive circuit variations resulting in very low worst case dissipation.
TO-220FH
INTERNAL SCHEMATIC DIAGRAM
RBE =20
Typ.
ABSOLUTE MAXIMUM RATINGS
Symbol V CBO V CEO V EBO IC I CM IB P tot V isol T stg Tj Parameter Collector-Base Voltage (I E = 0) Collector-Emitter Voltage (I B = 0) Emitter-Base Voltage (I C = 0) Collector Current Collector Peak Current (t p < 5 ms) Base Current Total Dissipation at T c = 25 o C Insulation Withstand Voltage (RMS) from All Three Leads to External Heatsink Storage Temperature Max. Operating Junction Temperature Value 1500 600 7 10 15 4 40 2500 -65 to 150 150 Unit V V V A A A W V
o o
C C
December 2002
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ST1803DFH
THERMAL DATA
R thj-case Thermal Resistance Junction-case Max 3.125
o
C/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Symbol I CES I EBO
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Parameter Collector Cut-off Current (V BE = 0) Emitter Cut-off Current (I C = 0) Emitter-Base Breakdown Voltage (I C = 0) Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage DC Current Gain
Test Conditions V CE = 1500 V V CE = 1500 V V EB = 4 V I E = 700 mA Tj = 125 o C
Min.
Typ.
Max. 1 2
Unit mA mA mA V
130 7
400
V (BR)EBO
V CE(sat) V BE(sat) h FE
IC = 4 A IC = 4 A IC = 4 A IC = 1 A I C = 4.5 A I C = 4.5 A IF = 5 A IC = 4 A L B = 5 H f = 16 KHz
I B = 0.8 A I B = 1.2 A I B = 0.8 A V CE = 5 V V CE = 1 V V CE = 5 V I Bon(END) = 0.8 A V BB = -2.5 V (see figure 1) 10 5
3
5 1.5 1.2
V V V
15 5 1.5 2.7 0.3
20 9 2 4 0.6 V s s
VF ts tf
Diode Forward Voltage INDUCTIVE LOAD Storage Time Fall Time
Pulsed: Pulse duration = 300 s, duty cycle 1.5 %
Safe Operating Area
Thermal Impedance
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ST1803DFH
Derating Curve Output Characteristics
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Collector Emitter Saturation Voltage
Base Emitter Saturation Voltage
DC Current Gain
DC Current Gain
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ST1803DFH
Power losses Switching Time Inductive Load
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Reverse Biased SOA
Figure 1: Inductive Load Switching Test Circuit.
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ST1803DFH
TO-220FH (Fully plastic High voltage) MECHANICAL DATA
DIM. MIN. A B D
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mm TYP. MAX. 4.6 2.7 2.75 0.7 1 1.8 1.8 5.2 2.7 10.4 16 28.6 9.8 3.4 15.9 9 14.5 2.4 16.4 9.3 15 0.626 0.354 0.570 30.6 10.6 1.126 0.385 MIN. 0.173 0.098 0.098 0.017 0.030 0.051 0.051 0.195 0.094 0.393 4.4 2.5 2.5 0.45 0.75 1.3 1.3 4.95 2.4 10
inch TYP. MAX. 0.181 0.106 0.108 0.027 0.039 0.070 0.070 0.204 0.106 0.409 0.630 1.204 0.417 0.134 0.645 0.366 0.590 0.094
E F F1 F2 G G1 H L2 L3 L4 L5 L6 L7 L8 L9
P011W
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ST1803DFH
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Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a trademark of STMicroelectronics (c) 2002 STMicroelectronics - Printed in Italy - All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom - United States. http://www.st.com
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